Semiconductor memory having redundancy circuit

ABSTRACT

A redundancy technique is introduced for a semiconductor memory and, more particularly, a redundancy technique for a dynamic random access memory (DRAM) having a storage capacity of 16 mega bits or more. In such a DRAM, the memory array is divided into memory mats. According to the present redundancy technique, for a semiconductor memory including a memory array which has a plurality of word lines, a plurality of bit lines arranged so that two-level crossings are formed between the word lines and the bit lines, memory cells disposed at desired ones of the two-level crossings, and spare bit lines, there is provided a redundancy circuit having a memory for storing therein a defective address existing in the memory array and comparing an address to be accessed with the stored defective address, and selection circuitry including logical OR gates for replacing a defective bit line by a spare bit line in accordance with the result of the comparison. Each of the address comparing circuits has stored therein the column address of a defective bit line and a part of the row address indicating the memory mat corresponding to the defective bit line.

This is a continuation of application Ser. No. 08/535,574, filed Sep.27, 1995 now U.S. Pat. No. 5,617,365; which is a continuation ofapplication Ser. No. 08/155,848, filed Nov. 23, 1993, now abandoned;which is a divisional of application Ser. No. 07/818,434, filed Dec. 27,1991, now U.S. Pat. No. 5,265,055; and which, in turn, is a continuationof application Ser. No. 07/419,399, filed Oct. 10, 1989, now abandoned.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor memory, and moreparticularly to a technique for repairing a semiconductor memory in sucha manner that defective memory cells are replaced by spare memory cells.

In recent years, the level of integration of a semiconductor memory hasbeen increased at high speed, and a semiconductor memory having astorage capacity of 1 mega bits has been mass-produced. However, as thelevel of integration of a semiconductor memory is made larger, eachelement is decreased in size, and the semiconductor chip is increased inarea. Thus, there arises a problem that the manufacturing yields of thememory become correspondingly reduced. In order to solve the problem,the so-called redundancy technique is used, in which defective memorycells are replaced by spare memory cells already provided on a chip. Asdiscussed on pages 479 to 487 of the IEEE, Journal of Solid-StateCircuits, Vol. SC-16, No. 5, October, 1981, the above technique is veryeffective for improving the manufacturing yields of a semiconductormemory.

In addition to the above technique, a redundancy method is proposed inJP-A-60-130,139, in which method a regular line in one of a plurality ofmemory mats can be replaced by a spare line in another memory mat. Inthis method, however, there arises the following problem. That is, in acase where a semiconductor memory is divided into a large number ofmemory mats, a complicated control operation is required to specify oneof the memory mats. This is because a predetermined or another memorymat has to be selected in accordance with whether or not an address tobe accessed is defective. Specifically, in a case where a memory matother than the predetermined memory mat is selected in a DRAM, it isrequired to operate a sense amplifier other than a predetermined senseamplifier. Thus, the access time associated with operation of the memoryis increased.

SUMMARY OF THE INVENTION

FIG. 1A shows an example of a semiconductor memory which utilizes theredundancy technique and has been studied by the present inventors. InFIG. 1A, reference numeral 10 designates a memory array, in which memorycells are arranged so as to form a matrix. The memory array 10 isdivided into a region 11 where regular memory cells are arranged, and aregion 12 where spare memory cells are arranged. In the region 11, N_(W)×N_(B) memory cells are disposed at desired ones of two-level crossingsof N_(W) word lines W i! (where i=0, 1, . . . N_(W) -1) and N_(B) bitlines B j! (where j=0, 1, . . . N_(B) -1). In the region 12, L×N_(B)memory cells (in the figure, L=4) are disposed at two-level crossings ofL spare word lines SW k! (where k=0, 1, . . . L-1) and the N_(B) bitlines. In a case where a folded bit line structure is used, each bitline is formed of two wiring conductors, but only one wiring conductoris shown in the figure for the sake of simplicity. Further, in FIG. 1A,reference numeral 20 designates sense amplifiers for amplifying thesignals read out from memory cells and input/output lines fortransferring data (or common signal lines in a case where only input oroutput data is sent), 30 an X-decoder applied with row address signalsA_(X) i! (where i=0, 1, . . . n_(W) -1, and n_(W) =log₂ N_(W)) forselecting one of N_(W) word lines, 40 a Y-decoder applied with columnaddress signals A_(Y) j! (where j=0, 1, . . . n_(B) -1, and n_(B) =log₂N_(B)) for selecting one of N_(B) bit lines, 50 a redundancy controlcircuit, 60 a spare word line selection circuit applied with the outputof the redundancy control circuit for selecting a spare word line, 701 adata input buffer, and 702 a data output buffer.

The present memory is provided with the redundancy control circuit forword lines. Accordingly, in a case where a regular word line isdefective, the memory can be repaired in such a manner that thedefective word line is replaced by one of the spare word lines with theaid of the redundancy control circuit 50 and the spare word lineselection circuit 60. Further, L address comparing circuits AC k! (wherek=0, 1, . . . L-1) are provided on a one-to-one basis for each spareword line. Each address comparing circuit stores therein the row addressof a defective word line, and checks whether or not an address to beaccessed is coincident with the stored address. When the address to beaccessed is coincident with the stored address, the output XR k! of theaddress comparing circuit AC k! used is set at a high level. The spareword line selection circuit 60, as shown in FIG. 1B, includes L spareword drivers 650. Each of the spare word drivers 650 is activated whenthe output XR k! of a corresponding address comparing circuit AC k! hasa high level. Thus, a corresponding spare word line SW k! is selected inresponse to a word line drive signal φ_(X) and the output of an NOR gate501 is set at a low level thereby disabling the X-decoder 30.Accordingly, a regular word line which is to be selected, is neverselected. That is, the regular word line is replaced by the spare wordline SW k!.

FIG. 2A shows another example of a semiconductor memory which utilizesthe redundancy technique and has been studied by the present inventors.In FIG. 2A, reference numeral 10 designates a memory array, in whichmemory cells are arranged so as to form a matrix. The memory array 10 isdivided into a region 14 where regular memory cells are arranged, and aregion 15 where spare memory cells are arranged. In the region 14, N_(W)×N_(B) memory cells are disposed at two-level crossings of N_(W) wordlines W i! (where i=0, 1, . . . N_(W) -1) and N_(B) bit lines B j!(where j=0, 1, . . . N_(B) -1). In the region 15, L×N_(W) memory cells(in the figure, L=4) are disposed at two-level crossings of L spare bitlines SB k! (where k=0, 1, . . . L-1) and the N_(W) word lines. Further,in FIG. 2A, reference numeral 20 designates sense amplifiers foramplifying the signals read out from memory cells and input/output linesfor transferring data, 30 an X-decoder applied with row address signalsA_(X) i! (where i=0, 1, . . . n_(W) -1, and n_(W) =log₂ N_(W)) forselecting one of N_(W) word lines, 40 a Y-decoder applied with columnaddress signals A_(Y) j! (where j=0, 1, . . . n_(B) -1, and n_(B) =log₂N_(B)) for selecting one of N_(B) bit lines, 50 a redundancy controlcircuit, and 63 a spare bit line selection circuit applied with theoutput of the redundancy control circuit for selecting a spare bit line.

The present memory is provided with the redundancy control circuit forbit lines. Accordingly, in a case where a regular bit line is defective,the memory can be repaired in such a manner that the defective bit lineis replaced by one of the spare bit lines with the aid of the redundancycontrol circuit 50 and the spare bit line selection circuit 63. Further,L address comparing circuits AC k! (where k=0, 1, . . . L-1) areprovided on a one-to-one basis for each of L spare bit lines. Eachaddress comparing circuit stores therein the column address of adefective bit line, and checks whether or not an address to be accessedis coincident with the stored address. When the address to be accessedis coincident with the stored address, the output YR k! of the addresscomparing circuit AC k! used is set at a high level. The spare bit lineselection circuit 63, as shown in FIG. 2B, includes L drivers 680. Eachof the drivers 680 is activated when the output YR k! of a correspondingaddress comparing circuit AC k! has the high level. Thus, acorresponding spare bit line SB k! is connected to input/output linesI/O through MOS transistors 690 and 691, in response to a bit lineselection signal φ_(Y), and the output of a NOR gate 501 is set at a lowlevel, and thereby disabling the Y-decoder 40. Accordingly, a regularbit line which is to be selected, is never selected. That is, theregular bit line is replaced by the spare bit line SB k!.

The present inventors have studied the above-mentioned redundancytechnique and have found that the following problem occurs whenincreasing the level of integration of a semiconductor memory. That is,when the level of integration of a semiconductor memory is increased, alarge number of memory cells are simultaneously replaced by spare memorycells through the redundancy technique, and thus a probability that adefective spare memory cell is used, is increased. This is because alarge number of memory cells are arranged along a single word or bitline. For example, in a 256K bit memory (N_(W) =N_(B) =512), 512 memorycells are simultaneously replaced by spare memory cells. While, in a 16M bit memory (N_(W) =N_(B) =4,096), 4,096 memory cells aresimultaneously replaced by spare memory cells. When at least one of thespare memory cells substituted for regular memory cells is defective, achip having the spare and regular memory cells is faulty. The redundancytechnique is used on the premise that spare memory cells are notdefective. Accordingly, when the level or degree of integration of asemiconductor memory is increased, the manufacturing yields thereofcannot be improved by the redundancy technique.

In a case where a large-scale semiconductor memory is constructed insuch a manner that a memory array is divided into a plurality of memorymats, the above problem becomes even more serious. When a semiconductormemory is made large in scale, the number of memory cells connected to asingle word (or bit) line is increased, and wiring length is increased.Thus, the parasitic resistance and capacitance of a wiring conductor areincreased. Hence, there arises a problem that a signal propagation timeis increased and a signal-to-noise ratio is reduced. In order to solvethis problem, a practice widely employed is to divide a memory arrayinto a plurality of memory mats, thereby shortening the wiring length ofa single word (or bit) line. However, when the redundancy technique isapplied to a semiconductor memory which is divided into memory mats, thefollowing problem is further aroused.

FIG. 3 shows an example of a semiconductor memory which corresponds to acase where the memory array of FIG. 1A is divided into four memory mats(that is, each word line is divided into two parts, and each bit line isdivided into two parts). In FIG. 3, reference numerals 100 to 103designate memory mats, 200 to 203 sense amplifiers and input/outputlines, 300 and 301 X-decoders, 400 a Y-decoder, 610 and 611 spare wordline selection circuits, 700 a multiplexer, 701 a data input buffer, and702 an data output buffer. Each memory mat includes a region 110, 111,112, or 113 where regular memory cells are arranged, and a region 120,121, 122, or 123 where spare memory cells are arranged. In each of theregions 110, 111, 112 and 113 (which correspond to the sub-regions 11A,11B, 11C and 11D of FIG. 1A, respectively), N_(W) ×N_(B) /4 memory cellsare disposed at two-level crossings of N_(W) /2 word lines and N_(B) /2bit lines. In each of the regions 120, 121, 122 and 123, L×N_(B) /2memory cells (in the figure, L=4) are disposed at two-level crossings ofL spare word lines and the N_(B) /2 bit lines. For example, in asemiconductor memory described in the above-mentioned reference, N_(W)/2=64, N_(B) /2=128, and L=4.

Explanation will first be made of a word-line selecting method in theexample of FIG. 3. In the present example, word lines are selected froma pair of memory mats. For example, at the same time as a word line W i,0! in the memory mat 110 is selected, a corresponding word line W i, 2!in the memory mat 112 is selected. At this time, no word line in thememory mats 111 and 113 is selected. Similarly, when word lines in thememory mats 111 and 113 are selected, no word line in the memory mats110 and 112 is selected. This is because the word lines W i, 0! and W i,2! are made by dividing a single word line into two parts, and hence canbe logically regarded as a single word line. Such is determined by oneof the row address signals (in the present example, the address signalA_(x) n_(W) -1! indicative of the leftmost bit of a row address) as towhich of a memory mat group 110 and 112 and a memory mat group 111 and113 is to be selected. A memory cell is finally selected by using columnaddress signals A_(Y) j! (where j=0, 1, . . . n_(B) -1). At this time,the multiplexer 700 determines which of a memory cell in the memory mat110 or 111 and a memory cell in the memory mat 112 or 113 is to beselected, by using one of the column address signals (in this example,the address signal A_(Y) n_(B) -1) indicative of the leftmost bit of acolumn address).

In the present example, each address comparing circuit compares the rowaddress signals other than the address signal A_(X) n_(W) -1! indicativeof the leftmost bit, with the corresponding row address signals storedin the address comparing circuit. The outputs XR k! of the addresscomparing circuits AC k! are supplied to the spare word line selectioncircuit. The spare word line selection circuit, as shown in FIG. 4,makes the logical product of the row address signal A_(X) n_(W) -1! (orthe complement thereof) and each of the outputs XR k!, to drive only aspare word line in the selected memory mat.

In the present memory, the replacement of a regular line by a spare lineis made in all the memory mats at the same time. This fact will beexplained below with reference to FIG. 5. FIG. 5 shows an example of amethod of replacing word lines by spare word lines. In FIG. 5, defectiveword lines W 0, 0!, W 2, 0!, W 1, 1! and W 3, 3! are replaced by spareword lines SW 0, 0!, SW 1, 0!, SW 2, 1! and SW 3, 3!, respectively.However, when the above replacement is carried out, other word lines arereplaced by spare word lines. For example, at the same time as thedefective word line W 0, 0! is replaced by the spare word line SW(0, 0!,corresponding word lines W 0, 1!, W 0, 2! and W 0, 3! in the memory mats101, 102 and 103 are replaced by spare word lines SW 0, 1!, SW 0, 2! andSW 0, 3!, respectively.

In the example of FIG. 3, there arises the following problems. The firstproblem is that, as is apparent from the comparison of FIG. 3 with FIG.1A, an area necessary for spare word lines is increased by dividing amemory array into memory mats. This is because each memory mat includesL spare word lines. A sub-region 12A shown in FIG. 1A corresponds to theregions 120 and 121 of FIG. 3, and a sub-region 12B shown in FIG. 1Acorresponds to the regions 122 and 123 of FIG. 3. Hence, in the presentexample, an area for spare word lines is twice as large as that in theexample of FIG. 1A. When each word line is divided into M_(W) parts andeach bit line is divided into M_(B) parts, an area for spare word linesis generally increased by a factor of M_(B), and an area for spare bitlines is generally increased by a factor of M_(W), though the spare bitlines are not shown in FIGS. 1A and 3. Thus, a chip area is increased.

The second problem is that when a defective word line is replaced by aspare word line, a large number of memory cells are replaced by sparememory cells. This is because, as mentioned above, the replacement of aword line by a spare word line is made in all the memory mats at thesame time. When each word line is divided into M_(W) parts and each bitline is divided into M_(B) parts, the number of spare memory cells whichare simultaneously substituted for regular memory cells at a time adefective word line is replaced by a spare word line, is generallyincreased by a factor of M_(B), and the number of spare memory cellswhich are simultaneously substituted for regular memory cells at a timea defective bit line is replaced by a spare bit line, is generallyincreased by a factor of M_(W). As has been already mentioned, anincrease in the number of spare memory cells simultaneously substitutedfor regular memory cells reduces the manufacturing yields. The first andsecond problems become serious in a large-scale integration memory, inwhich each of M_(W) and M_(B) has a large value.

FIG. 6 shows another method of applying the redundancy technique to asemiconductor memory, in which a memory array is divided into aplurality of memory mats. In FIG. 6, address comparing circuits areprovided on a one-to-one basis for each of the spare word lines in thememory mats. Accordingly, 4L address comparing circuits (in the figure,eight address comparing circuits) are used. Each address comparingcircuit compares row address signals A_(X) 0! to A_(X) n_(W) -1! andcolumn address signal A_(Y) n_(B) -1! indicative of the leftmost bit,with those stored in the circuit.

FIG. 7 shows how defective word lines are replaced by spare word lines,by way of example. As is apparent from the comparison of FIG. 7 withFIG. 5, the method shown in FIG. 6 is superior in two points to themethod shown in FIG. 3. The first point is that the utilizationefficiency of a spare word line is high, and thus the same number ofdefective word lines as in the example of FIG. 3 can be replaced byspare word lines even when the number of spare word lines per one memorymat is made smaller than that in the example of FIG. 3. This is becausethe probability that many defective word lines are included in onememory mat, is very low. The second point is that the number of sparememory cells which are simultaneously substituted for regular memorycells is small.

In the method shown in FIG. 6, however, there arises a problem that thenumber of address comparing circuits is increased. When each word lineis divided into M_(W) parts and each bit line is divided into M_(B)parts, M_(W) M_(B) L address comparing circuits are generally required,and thus a chip area is increased. This problem is very serious in alarge-scale integration memory, in which each of M_(W) and M_(B) has alarge value.

According to the present invention, when a memory array is divided intoM memory mats (where M≧2), the number m of word or bit lines which aresimultaneously replaced by spare lines in accordance with the redundancytechnique, is made smaller than the number M and equal to a divisor ofthe number M.

Further, an address comparing circuit can store therein not only logicalvalues "0" and "1" but also a don't-care value "X". When input data iscompared with the don't-care value, the result of comparison indicates"coincidence", independently of which of the logical values "1" and "0"is indicated by the input data. FIG. 8 shows the results of comparisonmade by the address comparing circuit.

By making the number m smaller than the number M, the number of memorycells which are simultaneously replaced by spare memory cells, isdecreased. Thus, the probability that the spare word lines aredefective, is reduced. Accordingly, a redundancy control circuit capableof greatly improving the manufacturing yields can be formed even in alarge-scale integration memory.

When the address comparing circuit is so constructed as to be capable ofstoring the don't-care value "X", each bit of an applied address can beselectively compared with a stored value. As shown in FIG. 8, when alogical value "0" or "1" is stored in the address comparing circuit, theresult of comparison indicates "coincident" or "not coincident" inaccordance with input data. That is, the stored value is compared with acorresponding bit of an input address. When the don't-care value "X" isstored in the address comparing circuit, the result of comparisonindicates "coincident", independently of input data. That is, that bitof an input address which corresponds to the stored value, is notcompared therewith. Thus, for example, the following defect-repairingoperations can be performed.

When all the bits of an address (that is, all the bits of row and columnaddresses) are compared with stored values, each of regular memory cellscan be replaced by a spare memory cell. When only a column address iscompared with a stored column address, each bit line can be replaced bya spare bit line. When bits of a column address other than the rightmostbit are compared with stored values, a pair of memory cells can bereplaced by a pair of spare memory cells. That is, various defects in asemiconductor memory such as a single-bit defect, a bit-line defect anda pair-bit defect, can be repaired. Thus, the manufacturing yields of asemiconductor memory can be made higher than that due to theconventional redundancy technique.

It is an object of the present invention to provide a redundancytechnique which can greatly improve the manufacturing yields of asemiconductor memory without requiring a large chip area.

It is another object of the present invention to provide a redundancytechnique which can enhance the utilization efficiency of spare bits.

These and other objects and many of the attendant advantages of thepresent invention will be readily appreciated and become betterunderstood by reference to the following detailed description whenconsidered in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 8 are diagrams for explaining redundancy control circuitswhich were studied by the present inventors, and the points of issue ofthese circuits.

FIGS. 9 and 10 are diagrams for explaining the first embodiment of thepresent invention.

FIGS. 11 to 13 are diagrams for explaining the second embodiment of thepresent invention.

FIGS. 14 to 16 are diagrams for explaining the third embodiment of thepresent invention.

FIG. 17 is a diagrams for explaining the fourth embodiment of thepresent invention.

FIG. 18 is a diagrams for explaining the fifth embodiment of the presentinvention.

FIG. 19 is a diagram showing the first embodiment of an addresscomparing circuit used in the present invention.

FIG. 20 is a diagram showing the second embodiment of an addresscomparing circuit used in the present invention.

FIGS. 21 and 22 are diagrams for explaining the sixth embodiment of thepresent invention.

FIGS. 23, 24A, 24B and 25 are diagrams for explaining the seventhembodiment of the present invention.

FIGS. 26 and 27 are diagrams for explaining the eighth embodiment of thepresent invention.

FIGS. 28 and 29 are diagrams for explaining the ninth embodiment of thepresent invention.

FIG. 30 is a diagram showing the third embodiment of an addresscomparing circuit used in the present invention.

FIG. 31 is a diagram showing the fourth embodiment of an addresscomparing circuit used in the present invention.

FIG. 32 is a diagram showing the fifth embodiment of an addresscomparing circuit used in the present invention.

FIG. 33 is a diagram showing an embodiment of a one-chip microcomputer,to which the present invention is applied.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Now, embodiments of the present invention will be explained below, withreference to the drawings. Although explanation will be made of a casewhere a redundancy technique is applied to a dynamic random accessmemory (DRAM), especially, a DRAM which includes memory cells each madeup of a single transistor and a single capacitor, the present inventionis also applicable to other semiconductor memories such as a staticrandom access memory (SRAM), an erasable programmable read only memory(EPROM), and an electrically erasable programmable read only memory(EEPROM). Further, although a semiconductor memory utilizing CMOStechniques will mainly be explained, the present invention is alsoapplicable to a semiconductor memory made up of MOS transistors of thesame polarity, bipolar transistors, or the combination of thesetransistors. Further, the combination of a semiconductor memoryaccording to the present invention and a microcomputer can produce aremarkable effect, and it is preferable to form the semiconductor memoryand the microcomputer on a single chip.

Embodiment 1

FIG. 9 shows the first embodiment of a semiconductor memory according tothe present invention. In FIG. 9, reference numerals 100 to 103designate memory mats, 200 to 203 sense amplifiers and input/outputlines, 300 and 301 X-decoders, 400 a Y-decoder, 500 a redundancy controlcircuit, 600 a spare word line selection circuit (having the samecircuit configuration as shown in FIG. 1B), 700 a multiplexer, 701 adata input buffer, and 702 a data output buffer. Each of the memory matsincludes a region 110, 111, 112, or 113 where regular memory cells arearranged, and a region 120, 121, 122, or 123 where spare memory cellsare arranged. In each of the regions 110 to 113, N_(W) ×N_(B) /4 memorycells are disposed at the two-level crossings of N_(W) /2 word lines Wi, n! (where i=0, 1, . . . N_(W) /2-1, and n=0, 1, . . . 3) and N_(B) /2bit lines B j, n! (where j=0, 1, . . . N_(B) /2-1, and n=0, 1, . . . 3).In each of the regions 120 to 123, L×N_(B) /2 memory cells (in thefigure, L=2) are disposed at the two-level crossings of L spare wordlines SW k, n! (where k=0, . . . L-1 and n=0, 1, . . . 3) and N_(B) /2bit line. Although the memory array of the present embodiment has thefolded bit line structure, the present invention is also applicable to asemiconductor memory having the open bit line structure. In a case wherethe folded bit line structure is used, a bit line is formed of twowiring conductors. However, only one wiring conductor is shown in thedrawings for the sake of simplicity. Details of the folded bit linestructure and open bit line structure are described on pages 127 to 135of the IEE PROC., Vol. 130, No. 3, June, 1983.

Now, explanation will be made of a redundancy technique which is carriedout for a defective word line in the present embodiment. A word lineselection method will first be explained. In the present embodiment,word lines in two memory mats are simultaneously selected. For example,in a case where a word line W i, 0! in the memory mat 110 is selected, acorresponding word line W i, 2! in the memory mat 112 is selected at thesame time as the word line W i, 0! is selected. At this time, no wordline in the memory mats 111 and 113 is selected. Similarly, when wordlines in the memory mats 111 and 113 are selected, no word line in thememory mats 110 and 112 is selected. This is because the word lines W i,0! and W i, 2! are made by dividing a single word line into two parts,and hence can be logically regarded as a single word line. It isdetermined by one of row address signals (for example, the addresssignal A_(X) n_(W) -1! indicative of the leftmost bit of a row address)which of a memory mat group 110 and 112 and a memory mat group 111 and113 is to be selected. A memory cell is finally selected by using columnaddress signals A_(Y) j! (where j=0, 1, . . . n_(B) -1). At this time,the multiplexer 700 determines which of a memory cell in the memory mat110 or 111 and a memory cell in the memory mat 112 or 113 is to beselected, by using one of the column address signals (for example, theaddress signal A_(Y) n_(B) -1! indicative of the leftmost bit of acolumn address).

Next, a method of replacing a defective word line by a spare word linewill be explained. In the memory of FIG. 3, as shown in FIG. 5, regularword lines in four memory mats are simultaneously replaced by spare wordlines. For example, in a case where the word line W 0, 0! in the memorymat 110 is defective, corresponding word lines W 0, 1!, W 0, 2! and W 0,3! in other memory mats are replaced by spare word lines at the sametime as the word line W 0, 0! is replaced by a spare word line. In thepresent embodiment, however, word lines in two memory mats which aresimultaneously selected are simultaneously replaced by spare word lines.FIG. 10 shows how word lines are replaced by spare word lines. Forexample, in a case where the word line W 0, 0! in the memory mat 110 isdefective, word lines W 0, 0! and W 0, 2! are simultaneously replaced byspare word lines, but no word line in the memory mats 111 and 113 isreplaced by a spare word line.

In order to realize the above replacement method, each address comparingcircuit compares the row address signal A_(X) n_(W) -1! indicative ofthe leftmost bit of a row address with a stored value. As has beenalready mentioned, the row address signal A_(X) n_(W) -1! is used forselecting one of the memory mat group 110 and 112 and the memory matgroup 111 and 113. In the memory of FIG. 3, word lines in four memorymats are simultaneously replaced by spare word lines, and hence eachaddress comparing circuit does not compare the address signal A_(X)n_(W) -1! with stored data. In the present embodiment, however, the rowaddress signal A_(X) n_(W) -1! is compared with the stored data, torealize the above-mentioned replacement method.

The first advantage of the present embodiment is that, since the abovereplacement method is used, the number of memory cells which aresimultaneously replaced by spare memory cells, is reduced. In the memoryof FIG. 3, N_(B) /2×4 (=2N_(B)) memory cells are simultaneously replacedby spare memory cells while in the present embodiment, N_(B) /2×2(=N_(B)) memory cells are simultaneously replaced by spare memory cells.That is, the number of memory cells which are simultaneously replaced byspare memory cells is one-half that in the memory of FIG. 3. Thus, theprobability that a defective memory cell is included in the spare memorycells substituted for regular memory cells is reduced, and themanufacturing yields of a semiconductor memory are improved. This effectis not remarkable in the present embodiment, since the memory array isdivided into a relatively small number of memory mats. In a large-scaleintegration memory where a memory array is divided into a large numberof memory mats, however, the above effect becomes remarkable. This isbecause the probability that none of the spare memory cells is defectiveis inversely proportional to an exponential function having the numberof spare memory cells as the power.

Now, let us consider a memory where each word line is divided into M_(W)parts and each bit line is divided into M_(B) parts. In a case wherecorresponding regular word lines in all memory mats are simultaneouslyreplaced by spare word lines, N_(B) M_(B) memory cells aresimultaneously replaced by spare memory cells. On the other hand, in acase where corresponding regular word lines in m memory mats (where m isa divisor of a numerical value M_(W) M_(B)) are simultaneously replacedby spare word lines in accordance with the present invention, mN_(B)/M_(W) memory cells are simultaneously replaced by spare memory cells.That is, the number of memory cells which are simultaneously replaced byspare memory cells, is reduced by a factor of m/M_(W) M_(B), as comparedwith that in the former case. It is to be noted that, in the presentembodiment of FIG. 9, M_(W) =2, M_(B) =2, and m=2. For example, let usconsider a 16M bit memory where N_(W) =N_(B) =4,096, M_(W) =4, M_(B)=16, and m=8. In a case where corresponding regular word lines in allmemory mats are simultaneously replaced by spare word lines, 65,536memory cells are simultaneously replaced by spare memory cells. However,in a case where corresponding regular word lines in m memory mats aresimultaneously replaced by spare word lines in accordance with thepresent invention, 8,192 memory cells which is one-eighth of 65,536memory cells, are simultaneously replaced by spare memory cells, andthus the probability that a defective memory cell is included in thespare memory cells, is greatly reduced.

The second advantage of the present embodiment is that each spare wordline has high utilization efficiency. Let us consider a case where theword line W i₁, 0! in the memory mat 110 and the word line W i₂, 1! inthe memory mat 111 are defective (where i₁ ≠i₂), by way of example. Inthe memory of FIG. 3, in order to repair such defects, two spare wordlines are used in each memory mat. That is, word lines W i₁, 0! to W i₁,3! are replaced with spare word lines SW 0, 0! to SW 0, 3!,respectively, and word lines W i₂, 0! to W i₂, 3! are replaced by spareword lines SW 1, 0! to SW 1, 3!, respectively. In the presentembodiment, however only one spare word line is used in each memory matto repair the above defects, that is, only four spare word lines areused. In other words, word lines W i₁, 0! and W i₁, 2! are replaced byspare word lines SW 0, 0! and SW 0, 2!, respectively, and word lines Wi₂, 1! and W i₂, 3! are replaced by spare word lines SW 0, 1! and SW 0,3!, respectively. Thus, the spare word lines SW 1, 0! to SW 1, 3! can beused for repairing other defects, and hence the manufacturing yields ofa memory can be improved.

A further advantage of the present embodiment is that the degree offreedom in selecting the number L of spare word lines included in onememory mat and the number R of address comparing circuits is large. Inthe conventional method shown in FIG. 3, corresponding regular wordlines in all the memory mats are simultaneously replaced by spare wordlines, and hence it is required to satisfy a relation L=R. For example,in FIG. 3, L=R=4. While, according to the present invention, the numberL and the number R can be relatively freely selected, and hence aredundancy control circuit can be formed which is small in area and highin operation efficiency. Next, the relation between the number L and thenumber R will be explained.

In a case where corresponding regular lines in m memory mats aresimultaneously replaced by spare lines, the following relation isgenerally satisfied:

    L≦R≦LM.sub.W M.sub.B /m                      (1)

The inequality sign on the left side indicates that it is nonsense tomake the number of spare lines included in one memory mat greater thanthe number of address comparing circuits. The inequality sign on theright side has the following meaning. Each memory mat includes L sparelines, and the number of memory mats is M_(W) M_(B). Accordingly, LM_(W)M_(B) spare lines are provided in a physical sense. However, m sparelines are simultaneously substituted for regular lines. Accordingly,LM_(W) M_(B) /m spare lines exist in a logical sense. The inequalitysign on the right side in the formula (1) indicates that it is nonsenseto make the number of address comparing circuits greater than the numberof logical spare lines. In the conventional method shown in FIG. 3, thenumber m is equal to M_(W) M_(B), and hence it is required to make thenumber L equal to the number R. According to the present invention,however, the number L and the number R can be freely selected, providedthat the formula (1) is satisfied.

When viewed from the standpoint of chip area, it is preferable toincrease the number R rather than the number L. This is because an areafor one address comparing circuit is generally smaller than an areanecessary for providing one spare line in each memory mat. In theconventional method, it is required to satisfy the relation L=R, andhence it is impossible to increase only the number R. According to thepresent invention, only the number R can be increased. Accordingly, itis possible to make the number L relatively small and to make the numberR relatively large. Thus, a redundancy control circuit can be formedwhich is small in area and high in operation efficiency. In other words,the gist of the present invention is to satisfy a relation which isobtained by eliminating the equality sign on the left side from theformula (1), that is, the following relation:

    L<R≦LM.sub.W M.sub.B /m                             (2)

For example, in the present embodiment of FIG. 9, M_(W) =M_(B) =2, andm=2. Accordingly, the formula (2) is rewritten as follows:

    L<R≦2L

It is to be noted that, in the present embodiment, L=2 and R=4.

When the number R is made greater than the number L, it may becomeimpossible to replace defective lines by spare lines, in spite of a factthat the number of defective lines is less than the number R. Forexample, in a case where defective lines are concentrated in a memorymat, and the number of defective lines included in the memory mat isless than the number R but is greater than the number L, the aboveproblem is realized. In this case, a sufficient number of addresscomparing circuits exist, but the faulty memory mat is deficient inphysical spare lines, and hence it is impossible to replace thedefective lines by spare lines. However, the probability that a largenumber of defective lines are concentrated in one memory mat is verysmall. Accordingly, when the number L is made greater than or equal totwo (2), the above problem is scarcely realized.

The present embodiment is applicable not only to a memory employing theaddress multiplex system, but also to a memory which does not employ theaddress multiplex system.

Embodiment 2

As is evident from the above explanation, it is desirable to make thenumber m of word lines which are simultaneously replaced by spare wordlines, through the redundancy technique, as small as possible. FIG. 11shows the second embodiment of a semiconductor memory according to thepresent invention, in which embodiment the number m is made equal to one(1). The present embodiment is different from the first embodiment ofFIG. 9 in the word line selection method and the defective word linereplacement method. In the embodiment of FIG. 9, corresponding regularword lines in two memory mats are simultaneously selected, and aresimultaneously replaced by spare word lines. In the present embodiment,however, only a word line in one memory mat is selected and replaced bya spare word line.

In the present embodiment, the column address signal A_(Y) n_(B) -1! isused for realizing the above selection/replacement operation. As hasbeen already mentioned, the address signal A_(Y) n_(B) -1! is used fordiscriminating between the memory mats 110 and 112, and fordiscriminating between the memory mats 111 and 113. First of all, notonly the row address signals but also the column address signal A_(Y)n_(B) -1! is applied to the X-decoders, to select only one memory matfrom four memory mats. Next, not only the row address signals but alsothe column address signal A_(Y) n_(B) -1! is compared with stored datain each address comparing circuit, to replace a regular word line in onememory mat by a spare word line. In order to perform such an operation,each of the spare word line selection circuits 610 to 613 has thecircuit configuration shown in FIG. 12. Referring to FIG. 12, thelogical product of the output XR k! of an address comparing circuit andthe column address signal A_(Y) n_(B) -1! (or the complement thereof) isproduced, to drive only a spare word line in the selected memory mat.

As shown in the above, it is a feature of the present embodiment to usea column address in replacing a defective word line by a spare wordline. In the conventional redundancy technique, only a row address isused for replacing a defective word line by a spare word line, and onlya column address is used for replacing a defective bit line by a sparebit line. When a column address is used for replacing a defective wordline by a spare word line in a memory including a plurality of memorymats, and a row address is used for replacing a defective bit line by aspare bit line in the memory, the following effects are produced.

FIG. 13 shows how defective word lines are replaced by spare word linesin the present embodiment, by way of example. As mentioned above, thenumber m of word lines which are simultaneously replaced by spare wordlines is equal to one (1). Hence, the number of memory cells which aresimultaneously replaced by spare memory cells, is one-half that in theembodiment of FIG. 9. Accordingly, the probability that the spare memorycells include a defective memory cell, is further reduced, and thus themanufacturing yields of a semiconductor memory is further improved.

Further, since the number of word lines which are simultaneouslyreplaced by spare word lines, is reduced, the utilization efficiency ofspare word lines is higher than that in the embodiment of FIG. 9. Forexample, let us consider a case where word lines W i₁, 0! and W i₂, 0!(where i₁ ≠i₂) are defective. In the embodiment of FIG. 9, four spareword lines are used for repairing the above defects. While, in thepresent embodiment, only two spare word lines are used.

In the present embodiment, the number m of word lines which aresimultaneously replaced by spare word lines, is smaller than that in theembodiment of FIG. 9. Accordingly, as can be seen from the formula (1),the degree of freedom in determining the number R of address comparingcircuits is larger than that in the embodiment of FIG. 9. Therefore, anefficient redundancy control circuit can be formed in accordance withhow defects are generated. This will be evident from the comparison ofthe present embodiment with the memory of FIG. 6. In the memory of FIG.6, address comparing circuits are provided for all the spare word linesin all memory mats, and thus R=LM_(W) M_(B). That is, the equality signon the right side in the formula (1) is used. In the present embodiment,it is not always required to realize the equality sign on the rightside. That is, in a case where a relatively small number of defectiveword lines exist, the number R of address comparing circuits can be madesmaller than that in the memory of FIG. 6. Accordingly, the area foraddress comparing circuits can be reduced. In the present embodiment,m=1 and L=2. Accordingly, the formula (1) is rewritten as follows:

    L=2≦R≦8=LM.sub.W M.sub.B /m

The number R is actually equal to four (4).

Embodiment 3

FIG. 14 shows the third embodiment of a semiconductor memory accordingto the present invention. In the present embodiment, an addresscomparing circuit is not directly connected to a spare word lineselection circuit, but is connected thereto through a switching circuit510 and an OR gate 505 or 506. In keeping with such circuit connection,each of address comparing circuits 620 to 623 has the circuitconstruction shown in FIG. 15. Referring to FIG. 15, the logical productof an output XL k!, the address signal A_(X) n_(W) -1! (or thecomplement thereof) and the address signal A_(Y) n_(B) -1! (or thecomplement thereof) is produced to drive only a spare word line in aselected memory mat. The address signals A_(X) n_(W) -1! and A_(Y) n_(B)-1! are used for specifying the memory mat. The present embodiment hasthe following features.

The first feature resides in that the number of wiring conductors forconnecting the redundancy control circuit 500 to the spare word lineselection circuits 620 to 623 can be reduced. In the embodiment of FIG.11, R wiring conductors are used. While, in the present embodiment, Lwiring conductors are used. As has been already mentioned, in thepresent invention, the number L is generally smaller than the number R.Accordingly, the number of wiring conductors in the present embodimentis smaller than that in the embodiment of FIG. 11.

The second feature of the present embodiment resides in that theelectrical connection between the address comparing circuits and thespare word lines can be flexibly altered, and hence each addresscomparing circuit can be flexibly utilized. In the memories which havebeen already mentioned, the electrical connection between addresscomparing circuits and spare word lines is fixed. For example, in thememory of FIG. 3, an address comparing circuit AC k! is used for drivingonly spare word lines SW k, 0! to SW k, 3! (where k=0, 1, 2, or 3). Inthe memory of FIG. 6, an address comparing circuit AC k, l! is used fordriving only a spare word line SW k, l! (where k=0 or 1, and l=0, 1, 2or 3). In the embodiment of FIG. 11, an address comparing circuit AC 2k!is used for driving only spare word lines SW k, 0! and SW k, 2!, and anaddress comparing circuit AC 2k+1! is used for driving only spare wordlines SW k, 1! and SW k, 3! (where k=0, or 1). In the presentembodiment, such restrictions do not exist, and each address comparingcircuit can drive a desired one of spare word lines, provided that theaddress stored in the address comparing circuit is changed, and thecorresponding one of the switching circuits 510 is put in an appropriateconnecting state. Two bits A_(X) n_(W) -1! and A_(Y) n_(B) -1! of theaddress stored in the address comparing circuit specify a memory mat,and one of the switching circuits 510 specifies a spare word line in thespecified memory mat. Thus, the probability that defects can berepaired, is increased. Let us consider a case where two defective wordlines exist in each of the memory mats 110 and 112, by way of example,the embodiment of FIG. 11 cannot repair such defects, but the presentembodiment can repair the defects.

The third feature of the present embodiment is that the presentembodiment is tolerant to the trouble in an address comparing circuit,since the electrical connection between address comparing circuits andspare word lines can be flexibly changed. For example, let us consider acase where the address comparing circuit AC 0! is used for driving thespare word line SW 0, 0!. When the address comparing circuit AC 0! isfound defective, for example, the address comparing circuit AC 1! can beused in place of the circuit AC 0!.

Needless to say, the present embodiment has the features of theembodiment of FIG. 11, in addition to the first, second and thirdfeatures.

FIG. 16 shows an example of the switching circuit 510 included in thepresent embodiment. In FIG. 16, reference numeral 511 designates a fusewhich can be blown by a laser beam, 512, 518 and 520 N-channel MOStransistors, 517 and 519 P-channel MOS transistors, 513 an inverter, and514 and 515 NAND gates. When the fuse is not blown, a node 532 is keptat a low potential level, and a node 533 is kept at a high potentiallevel. Thus, a signal can be transmitted between terminals x and z. Whenthe fuse is blown, the node 532 is put to a high potential level, andthe node 533 is put to a low potential level. Thus, a signal can betransmitted between terminals y and z.

The present embodiment is an improved version of the embodiment of FIG.11. A similar improved version can be formed for the embodiment of FIG.9.

Embodiment 4

FIG. 17 shows the fourth embodiment of a semiconductor memory accordingto the present invention. In the present embodiment, the outputs XR 0!to XR 3! of four address comparing circuits (generally speaking, Raddress comparing circuits) are not directly applied to the spare wordline selection circuits, but the logical product of two outputs(generally speaking, R/L outputs) is produced. Two signals XL 0! and XL1! (generally speaking L signals) thus obtained are applied to the spareword line selection circuits. In keeping with such a circuitconfiguration, each of the spare word line selection circuits has thecircuit connection shown in FIG. 15. In each spare word line selectioncircuit, as shown in FIG. 15, the logical product of the output XL k!,the address signal A_(X) n_(W) -1! (or the complement thereof) and theaddress signal A_(Y) n_(B) -1! (or the complement thereof) is producedto drive only a spare word memory in a selected memory mat. The addresssignals A_(X) n_(W) -1! and A_(Y) n_(B) -1! are used for selecting thememory mat. The present embodiment has the following features.

The features of the embodiment of FIG. 14 are also contained in thepresent embodiment, as they are. That is, the first feature is that thenumber of wiring conductors which are extended from the redundancycontrol circuit to the spare word line selection circuits, can bereduced. The second feature is that the electrical connection betweenthe address comparing circuits and the spare word lines can be flexiblychanged, and thus each address comparing circuit can be flexiblyutilized. The third feature is that the present embodiment is tolerantto the defect in an address comparing circuit. In addition to thesefeatures, the present embodiment has the following features. The presentembodiment is simpler in circuit construction than the embodiment ofFIG. 14. Further, the electrical connection between an address comparingcircuit and spare word lines can be changed, not by blowing the fuse ofa switching circuit but by varying the address stored in the addresscomparing circuit. Two bits (that is, A_(X) n_(W) -1! and A_(Y) n_(B)-1!) of the address stored in the address comparing circuit specify onememory mat.

In the present embodiment, as is evident from the above explanation, itis preferable to make the number R equal to a multiple of the number L.

The present embodiment is an improved version of the embodiment of FIG.11. A similar improved version can be constructed for the embodiment ofFIG. 9.

The embodiments of FIGS. 11, 14 and 17 are superior to the embodiment ofFIG. 9, in that the number m is equal to one (1). However, it isimpossible to use the redundancy techniques of FIGS. 11, 14 and 17 asthey are, for the purpose of replacing a defective word line included ina DRAM with the ordinary address multiplex system. The first reason isas follows. In the DRAM, it is necessary to refresh memory cells, andthus it is impossible to freely determine the number of word lines whichare simultaneously selected. In the embodiment of FIG. 9, N_(B) memorycells are simultaneously refreshed while in the embodiments of FIGS. 11,14 and 17, N_(B) /2 memory cells are simultaneously refreshed.Accordingly, in order to apply the redundancy techniques of FIGS. 11, 14and 17 to a DRAM, it is necessary to vary the repetition frequency ofrefresh operation. The second reason is that since the address multiplexsystem is used, a column address is not yet inputted at a time a wordline is selected. However, in a case where the above problems do notarise, the redundancy techniques of FIGS. 11, 14 and 17 are applicable.For example, these techniques are applicable to a static RAM, and arealso applicable to a DRAM which does not use the address multiplexsystem, and in which the repetition frequency of fresh operation is notrestricted. Even in an ordinary DRAM, the above redundancy techniquescan be used for repairing the defect in a bit line. This is because therepetition frequency of refresh operation is not affected by the numberof bit lines which are simultaneously selected, and moreover a columnaddress has been inputted at a time a bit line is selected.

Embodiment 5

As is evident from the above, in a case where a defective word line in aDRAM is replaced by a spare word line, it is preferable that memorycells which are simultaneously refreshed, are simultaneously replaced byspared memory cells, as in the embodiment of FIG. 9. Even in a casewhere a defective word line in a DRAM is replaced by a spare word line,the structure shown in FIG. 18 can make the number m equal to one (1).This is because a memory array is divided into four memory mats in sucha manner that each word line is not divided but each bit line is dividedinto four parts. In the fifth embodiment shown in FIG. 18, a defectiveword line can be replaced by a spare word line in the same manner as inthe embodiment of FIG. 17. In the present embodiment, however, N_(B)memory cells are simultaneously refreshed and only row address signalsare used for specifying a memory mat, as in the embodiment of FIG. 9.

In the present embodiment, a single Y-decoder 40 is provided at an endof the memory, and an output YS j! of the Y-decoder is supplied to eachmemory mat through a wiring conductor which is indicated by a dot-dashline in FIG. 18. That is, a technique is used which is called"multi-division bit line", and a plurality of memory mats have oneY-decoder in common, to reduce a chip area. Further, two memory mats usea circuit block which includes sense amplifiers and input/out lines, incommon. In more detail, memory mats 130 and 131 use a circuit block 240in common, and memory mats 132 and 133 use a circuit block 241 incommon. This technique is called "shared sense", and is effective inreducing the area of sense amplifiers. The "multi-division bit line" andthe "shared sense" are described, for example, on pages 282 and 283 ofthe IEEE Digest of Technical Papers, February, 1984, and in U.S. Pat.No. 4,675,845.

In the first to fifth embodiment, a word line is replaced by a spareword line in accordance with the present invention. However, the presentinvention is not limited to a word line, but is applicable to thereplacement of a bit line by a spare bit line.

Embodiment 1 of Address Comparing Circuit

Next, explanation will be made of an address comparing circuit used inthe present invention. FIG. 19 shows an embodiment of an addresscomparing circuit included in the semiconductor memory of FIG. 9. InFIG. 19, reference numeral 801 designates an N-channel MOS transistor,802 and 803 P-channel MOS transistors, 804 an inverter, 810 a bitcomparing circuit for storing therein one bit of a wrong (e.g.,defective) address to compare one bit of an applied address with thestored bit, 811 a fuse which can be blown by a laser beam, 812 and 821to 824 N-channel MOS transistors, 817 to 820 P-channel MOS transistors,813 an inverter, and 814 and 815 NAND gates. Now, explanation will bemade of the operation of the address comparing circuit of FIG. 19.

First, a pre-charge signal XDP is brought to a low level, to make thetransistor 802 conductive, thereby setting a node 805 to a highpotential level. At this time, an output XR has a low level. Next,address signals A_(X) i! (where i=0, 1, . . . n_(W) -1) are applied tobit comparing circuits 810. Each bit comparing circuit 810 compares onebit stored therein (namely, one bit of a wrong address stored in theaddress comparing circuit) with an address signal A_(X) i!. When theaddress signal A_(X) i! coincides with the stored bit, an output C i!has a high level. When the above address signal does not coincide withthe stored bit, the output C i! has a low level. When the results ofcomparison in all the bit comparing circuits indicate coincidence, allof the transistors 801 are put in a conductive state. Thus, the node 805is discharged, and has a low potential level. At this time, the outputXR has a high level. That is, it is judged (for example, a determinationis made) that the applied address coincides with the stored wrongaddress. In a case where at least one bit of the applied address doesnot coincide with a corresponding one bit of the stored wrong address,the node 805 is not discharged, and hence the output XR is kept at thelow level. The transistor 803 has relatively small transfer conductance,and is used for latching the potential of the node 805. When the node805 is not discharged, the output XR has the low level, and hence thetransistor 803 is made conductive. Thus, the potential of the node 805is kept at the high level.

Next, the bit comparing circuit 810 will be explained in detail. In thebit comparing circuit, the logical value of one bit of a wrong addressis indicated by whether or not the fuse 811 is blown. In FIG. 19, astate that the fuse is not blown, corresponds to a logical value "0",and a state that the fuse is blown, corresponds to a logical value "1".In a case where the fuse is not blown, a node 830 has a high potentiallevel, and a node 831 has a low potential level. Nodes 832 and 833 onthe output side of a latch circuit, which is formed of cross-coupledNAND gates 814 and 815, have low and high potential levels,respectively. Accordingly, when the address signal A_(X) i! indicates alogical value "0", that is, when the address signal A_(X) i! has a lowlevel and the complement thereof A_(X) i! has a high level, the output Ci! has the high level. In a case where the fuse is blown, the potentialsof the nodes 830 to 833 are reversed. Thus, when the address signalA_(X) i! indicates a logical value "1", the output C i! has the highlevel.

One of the bit comparing circuits is not applied with the signals A_(X)i! and A_(X) i!, but is applied with a source voltage Vcc and a timingsignal φA which is put from a high level to a low level in synchronismwith the level change of the address signal, to be used as an enablecircuit. It is determined by the enable circuit whether or not theaddress comparing circuit is used for repairing a defect. In a casewhere the address comparing circuit is used, the fuse of the enablecircuit is blown. When this fuse is not blown, the output E of theenable circuit is always kept at a low level, and thus the output Xr ofthe address comparing circuit is always kept at a low level.

As mentioned above, in the embodiments of FIGS. 11, 14 and 17, thecolumn address signal A_(Y) n_(B) -1is compared with stored data. Thiscomparison can be carried out by adding one bit comparing circuit 810and one MOS transistor 801 to the address comparing circuit of FIG. 19.

A device for storing a wrong address is not always required to include afuse which can be blown by a laser beam, but may include a fuse whichcan be electrically blown, or may be formed of a nonvolatile memory suchas an EPROM.

Embodiment 2 of Address Comparing Circuit

FIG. 20 shows another embodiment of an address comparing circuit. Thisembodiment is suitable for use in the semiconductor memories of FIGS. 17and 18. The present embodiment is different from the embodiment of FIG.19 in that a pair of circuit blocks 850 and 851 each including aplurality of bit comparing circuits 810 and N-channel MOS transistors801 are provided. Two wrong (e.g., defective) addresses are stored inthe circuit blocks 850 and 851. The operation of the present embodimentwill be explained below.

First, the pre-charge signal XDP is put to a low level, to set the node805 to a high potential level. Next, the address signals A_(X) i! (wherei=0, 1, . . . n_(W) -1! are applied to the circuit blocks 850 and 851.Thus, the address signals are compared with wrong addresses stored inthe circuit blocks 850 and 851. When the applied address coincides withone of the wrong addresses, the node 805 is discharged, and thus theoutput Xr has a high level.

As is evident from the above explanation, the present embodiment isequivalent to the combination of two address comparing circuits and oneOR gate 502 or 503 in the redundancy control circuit of FIG. 17 or 18.Accordingly, when the present embodiment is used, the OR gate can beomitted from the redundancy circuit. Moreover, the discharge time of thenode 805 is the same as in the embodiment of FIG. 19, and thus a delaytime due to the OR gate can be eliminated.

Now, let us consider a case where troubles with a bit line are generatedin the memory of FIG. 18. In this case, defects may occur in a pluralityof memory mats, since the memory mats use the Y-decoder and a senseamplifier in common. This problem can be solved by storing not onlylogical values "0" and "1" but also a don't-care value "X" in theaddress comparing circuit, as will be explained below. Now, explanationwith be made of embodiments of a semiconductor memory according to thepresent invention which embodiments utilize the don't-care value.

Embodiment 6

FIG. 21 shows the sixth embodiment of a semiconductor memory accordingto the present invention. In FIG. 21, reference numeral 10 designates amemory array, 20 sense amplifiers and input/output lines, 30 anX-decoder, 40 a Y-decoder, 500 a redundancy control circuit, 630 a sparebit line selection circuit (having the same circuit construction as thatof FIG. 33), 701 a data input buffer, and 702 a data output buffer. Thememory array 10 includes a region 14 where regular memory cells arearranged, and a region 15 where spare memory cells are arranged. In theregion 14, N_(W) ×N_(B) memory cells M i, j! are disposed at two-levelcrossings of N_(W) word lines W i! (where i=0, 1, . . . N_(W) -1) and Nbbit lines B j! (where j=0, 1, . . . N_(B) -1). In the region 15, N_(W)×L spare memory cells (in the figure, L=2) are disposed at two-levelcrossings of N_(W) word lines and L spare bit lines SB k! (where k=0, .. . L-1). Although the folded bit line structure is used in the presentembodiment, the present invention is also applicable to a case where theopen bit line structure is used.

Now, explanation will be made of the features of the redundancytechnique used in the present embodiment. The features reside in thatnot only column address signals but also row address signals A_(X) 0! toA_(X) n_(W) -1! are applied to each address comparing circuit, and adon't-care value "X" can be stored in each address comparing circuit.Thus, it is possible to compare the applied address with a storedaddress, or not to compare the applied address with any data. In theconventional redundancy technique of FIG. 2A, only the applied columnaddress is compared with the column address stored in the addresscomparing circuit, to replace regular memory cells belonging to one bitline by spare memory cells. According to the present embodiment, whenthe applied row address is not compared with any data, regular memorycells belonging to one bit line are simultaneously replaced by sparememory cells. When not only the column address but also the row addressis compared with stored data, a regular memory cell can be replaced by aspare memory cell, bit by bit.

Now, the redundancy technique in the present embodiment will beexplained below, with reference to FIG. 22. FIG. 22 is a table showingexamples of the replacement method which can be carried out by theredundancy control circuit of the present embodiment, that is, how manyregular memory cells are simultaneously replaced by spare memory cells.In the table of FIG. 22, a sign ο indicates that an input address signalis compared with a stored value, (that is, a logical value "0" or "1" isstored in a bit comparing circuit) and a sign x indicates that the inputaddress signal is not compared with any data, (that is, a don't-carevalue "X" is stored in the bit comparing circuit). When all of rowaddress signals and column address signals are compared with storeddata, as shown in the first column of the table, a regular memory cellcan be replaced by a spare memory cell, bit by bit. When the row addresssignals are not compared with any data, as shown in the third column ofthe table, one bit line is replaced by a spare bit line. Further, whenonly the rightmost bit of the input row address is not compared with anydata, as shown in the second column, a pair of regular memory cells aresimultaneously replaced by spare memory cells.

As mentioned above, it is one feature of the present embodiment to usethe row address in repairing a defect with respect to a bit line. In theconventional redundancy technique, only the row address is used forreplacing a defective word line by a spare word line, and only thecolumn address is used for replacing a defective bit line by a spare bitline. When the row address is used for repairing a defect with respectto a bit line, as in the present embodiment, or when the column addressis used for repairing a defect with respect to a word line, variousreplacement methods mentioned above can be realized.

It is an advantage of the present invention to make it possible to takea carefully thought-out measure for various defects in a semiconductormemory by using the above-mentioned replacement methods. In general,defects in a semiconductor memory include a single-bit defect (which isgenerated by, for example, a pin hole in the capacitor of a memorycell), a pair-bit defect (which is caused by, for example, a badcontact), a bit-line defect (which is generated by, for example, thebreaking of a bit line), and others. According to the conventionaltechnique of FIG. 2A, even when a single-bit defect is generated, a bitline containing a defective memory cell is replaced by a spare bit line.While, according to the present embodiment, when a single-bit defect isgenerated, only a defective memory cell is replaced by a spare memorycell. Further, when a pair-bit defect is generated, only two defectivememory cells are replaced by spare memory cells. It is needless to saythat when a bit-line defect is generated, a defective bit line can bereplaced by a spare bit line. As mentioned above, according to thepresent embodiment, only a minimum number of regular memory cells arereplaced by spare memory cells. Thus, the probability that a defectivememory cell is included in the spare memory cells substituted for theregular memory cells, is reduced, since the probability that all thespare memory cells are non-defective, is inversely proportional to anexponential function having the number of spare memory cells as thepower.

Further, according to the present embodiment, a minimum number of sparememory cells necessary for repairing a defect are used, and thus theutilization efficiency of spare memory cells is improved. For example,let us consider a case where regular memory cells M i₁, j₁ ! and M i₂,j₂ ! are defective (where i₁ ≠i₂ and j₁ ≠j₂). According to theredundancy technique of FIG. 2A, two spare bit lines are required forrepairing such defects. While, according to the present embodiment, thewrong addresses i₁, j₁ ! and i₂, j₂ ! are stored in, for example, theaddress comparing circuits AC 0! and AC 1!, respectively. Then, thedefects can be repaired by using only a spare bit line SB 0!.Accordingly, another spare bit line SB 1! can be used for repairingother defects. Thus, the manufacturing yields of a semiconductor memorycan be improved.

Next, the redundancy control circuit 500 will be explained in detail.The redundancy control circuit of the present embodiment includes Raddress comparing circuits AC k! (where k=0, 1, . . . R-1), OR gates 502and 503, and an NOR gate 504. The redundancy control circuit generallyincludes L OR gates, each of which produces the logical sum of theoutputs of R/L address comparing circuits. In FIG. 21, however, R=4, andR/L=2. Two of the outputs YR 0! to YR 3! of R(=4) address comparingcircuits are applied to the OR gate 502, and the remaining outputs areapplied to the OR gate 503. The signals YL 0! and L 1! outputted fromthe OR gates 503 and 502 are applied to the spare bit line selectioncircuit 630, to select a spare bit line. When one of the outputs YR 0!to YR 3! has a high level, the NOR gate 504 disables the Y-decoder 40.

An advantage of the present invention is that the degree of freedom indetermining the number L of spare bit lines and the number R of addresscomparing circuits is large. In the conventional redundancy technique,the whole of a regular bit line is replaced by a spare bit line, andhence it is required to satisfy a relation L=R. For example, in thememory of FIG. 2A, L=R=4. While, according to the present invention, thenumber L and the number R can be relatively freely selected, and hence aredundancy control circuit can be formed which is small in area and highin operation efficiency. The relation between the number L and thenumber R will be explained below.

When the number of regular memory cells which are replaced by sparememory cells at one time, is expressed by b, the following relation isgenerally satisfied:

    L≦R≦LN.sub.W /b                              (3)

The inequality sign on the left side indicates that it is nonsense tomake the number of spare lines greater than the number of addresscomparing circuits. The inequality sign on the right side has thefollowing meaning. The number of spare memory cells is LN_(W), and bspare memory cells are simultaneously substituted for regular memorycells. Accordingly, LN_(W) /b replacement operations can be performed.Hence, it is nonsense to make the number of address comparing circuitsgreater than LN_(W) /b. In the conventional technique, in which thewhole of a regular bit line is replaced by a spare bit line, a relationb=N_(W) exists, and hence it is required to satisfy a relation L=R.While, according to the present embodiment, the number b can be freelyselected, provided that a relation 1≦b≦N_(W) is satisfied. Accordingly,the degree of freedom in determining the number L and the number R isincreased.

When viewed from the standpoint of chip area, it is preferable toincrease the number R rather than than the number L. This is because anarea for one address comparing circuit is generally smaller than an areanecessary for providing one spare line in each memory mat. In theredundancy technique of FIG. 2A, it is required to satisfy the relationL=R, and hence it is impossible to increase only the number R. Accordingto the present invention, only the number R can be increased. That is,it is possible to make the number L relatively small and to make thenumber R relatively large. Thus, a redundancy control circuit can beformed which is small in area and high in operation efficiency. In otherwords, the gist of the present invention is to satisfy a relation whichis obtained by eliminating the equality sign on the left side from theformula (3), that is, the following relation:

    L<R≦LN.sub.W /b                                     (4)

For example, in the present embodiment shown in FIG. 21, L=2, and R=4.As is evident from this example, it is preferable to make the number Requal to a multiple of the number L.

Embodiment 7

FIG. 23 shows the seventh embodiment of a semiconductor memory accordingto the present invention. The present embodiment is different from theembodiment of FIG. 21, in the wiring method for the outputs of addresscomparing circuits. In the present embodiment, a signal YL which is thelogical sum of the outputs YR 0! TO YR 3!, is applied to a spare bitline selection circuit 640. In keeping with such circuit connection, thespare bit line selection circuit 640 has a circuit structure shown inFIG. 24A or 24B. This circuit structure is used for preventing themultiple selection of spare bit lines. In FIG. 24A, the logical productof the signal YL and an address signal A_(Y) 0! for selecting a bit line(or the complement of the address signal) is produced, to specify onlyone spare bit line. Further, in FIG. 24B, a bit line selection signalφ_(Y) is predecoded by the address signal A_(Y) 0! and the complementthereof, and the signals φ_(Y0) and φ_(Y1) thus obtained are used forspecifying only one spare bit line.

A feature of the present embodiment is that two bit lines can be used asone unit in a replacement operation. Now, this feature will beexplained, with reference to a table shown in FIG. 25. The first, secondand fifth columns of the table correspond to a single-bit defect, apair-bit defect and a bit-line defect, respectively, as in FIG. 22. Thethird column of the table corresponds to a pair-bit defect of differenttype, that is, a case where adjacent bits on the same word line aredefective. It is to be noted that the second column corresponds to acase where adjacent bits on the same bit line are effective. Suchpair-bit defects are caused by the short circuit between the capacitorsof adjacent memory cells. The fourth column of the table corresponds toa case where 2×2 memory cells are defective. In a static RAM, thisdefect is caused by, for example, a bad contact. The sixth column of thetable corresponds to a case where two bit lines which are adjacent toeach other, are defective. This defect is caused by, for example, theshort circuit between the bit lines. According to the presentembodiment, various defects which have been mentioned above, can bereadily repaired.

Another feature of the present embodiment is that the number of wiringconductors which are extended from the redundancy control circuit 500 tothe spare bit line selection circuit 640, is reduced.

Embodiment 8

FIG. 26 shows the eighth embodiment of a semiconductor memory accordingto the present invention. The present embodiment is different from theembodiments of FIGS. 21 and 23 in that a memory array is divided into aplurality of memory mats (in the figure, four memory mats 130 to 133) ina direction parallel to bit lines. Each memory mat includes a region140, 141, 142, or 143 where regular memory cells are arranged, and aregion 150, 151, 152, or 153 where spare memory cells are arranged. Ineach of the regions 140 to 143, N_(W) ×N_(B) /4 memory cells aredisposed at two-level crossings of N_(W) /4 word lines W i, n! (wherei=0, 1, . . . N_(W) /4-1, and n=0, 1, . . . , 3) and N_(B) bit lines Bj, n! (where j=0, 1, . . . N_(B) -1, and n=0, 1, . . . 3). In each ofthe regions 150 to 153, N_(W) ×L/4 spare memory cells (in the figure,L=2) are disposed at two-level crossings of N_(W) /4 word lines W i, n!(where i=0, 1, . . . N_(W) /4-1, and n=0, 1, . . . 3) and L spare bitlines SB k, n! (where k=0, . . . L-1, n=0, 1, . . . 3). Circuit blocks230 to 233 each including sense amplifiers and input/output lines areprovided so as to correspond to the memory mats 130 to 133,respectively. However, only a single Y-decoder 40 is provided in an endportion. An output YS j! of the Y-decoder is applied to each memory matthrough a wiring conductor which is indicated by a dot-dash line in FIG.26. Similarly, an output SYS k! of the spare bit line selection circuit630 is applied to each memory mat through a wiring conductor which isindicated by another dot-dash line in FIG. 26. A technique which iscalled "division of bit line", is used in the present embodiment. Thatis, a plurality of memory mats use one Y-decoder in common, and thus achip area is reduced.

The present invention is specifically effective for a semiconductormemory, in which a plurality of memory mats use circuit means (forexample, a Y-decoder and output lines thereof) in common, such as thepresent embodiment. The reason for this is as follows. When a fault isgenerated in the common circuit means, a defect may be generated in aplurality of memory mats. According to the present invention, such adefect can be readily repaired, as will be explained below withreference to a table shown in FIG. 27. The first and second columns ofthe table correspond to single-bit and pair-bit defects, respectively,as in FIG. 22. The third column of the table corresponds to a bit-linedefect. In the present embodiment, however, the memory array is dividedinto four memory mats. Accordingly, address signals for specifying oneof the memory mats (that is, address signals A_(X) n_(W) -1! and A_(X)n_(W) -2! indicative of two leftmost bits of a row address) are comparedwith stored data. Thus, only a bit line in the specified memory mat isreplaced by a spare bit line. The fourth column of the table correspondsto a case where the Y-decoder is defective. In this case, the addresssignals A_(X) n_(W) -1! and A_(X) n_(W) -2! are not compared with anydata. Thus, corresponding bit lines in four memory mats aresimultaneously replaced by spare bit lines.

Embodiment 9

FIG. 28 shows the ninth embodiment of a semiconductor memory accordingto the present invention. The present embodiment is different from theembodiment of FIG. 26 in that two memory mats use a circuit block whichincludes sense amplifiers and input/output lines, in common. That is,the memory mats 130 and 131 use a circuit block 240 in common, and thememory mats 132 and 133 use a circuit block 241 in common. Thistechnique is called "shared sense", and can reduce an area necessary forsense amplifiers.

According to the present embodiment, when a fault is generated in asense amplifier, corresponding bit lines in the memory mats on the leftand right sides of the sense amplifier become defective. Such defectscan be readily repaired, as will be explained below with reference to atable shown in FIG. 29. The first, second, third and fifth columns oftable correspond to a single-bit defect, a pair-bit defect, a bit-linedefect and a Y-decoder defect, respectively, as in FIG. 27. The fourthcolumn of the table corresponds to a case where a sense amplifier isdefective. In this case, an address signal for specifying one of amemory mat group 130 and 131 and a memory mat group 132 and 133 (thatis, address signal A_(X) n_(W) -1! indicative of the leftmost bit of arow address) is compared with stored data. Thus, corresponding bit linesin memory mats which exist on both sides of the defective senseamplifier are simultaneously replaced by spare bit lines.

In the sixth to ninth embodiments, a defect with respect to a bit linehas been repaired. However, an inventive redundancy technique utilizinga don't-care value is also applicable to a case where a defect withrespect to a word line is repaired.

Embodiment 3 of Address Comparing Circuit

Next, explanation will be made of an address comparing circuit which isused in the sixth to ninth embodiments of a semiconductor memoryaccording to the present invention. The feature of the above addresscomparing circuit is that three kinds of values "0", "1" and "X" can bestored in the address comparing circuit, to indicate a wrong address.FIG. 30 shows the third embodiment of an address comparing circuit. InFIG. 30, reference numeral 800 designates an AND gate, 810 a bitcomparing circuit for storing one bit of a wrong address to compare onebit of an applied address with the stored bit, 861 to 863 fuses whichcan be blown by a laser beam, 864 and 867 inverters, 865 and 866 NANDgates, 809 an enable circuit for determining whether or not the addresscomparing circuit is to be used in a redundancy circuit, 811 a fusewhich can be blown by a laser beam, 812 an N-channel MOS transistor, 813and 816 inverters, and 814 and 815 NAND gates. The operation of theaddress comparing circuit will be explained below.

The enable circuit will first be explained. In a case where the addresscomparing circuit is used for repairing a defect, the fuse 811 of theenable circuit is first blown. Thus, a node 830 is brought to a lowpotential level, a node 831 is put to a high potential level, a node 832has a high potential level, and a node 833 has a low potential level.Accordingly, an enable signal E has a high level. In a case where thefuse 811 is not blown, the potential levels of the nodes 830 to 833 arereversed, and thus the enable signal E has a low level.

Next, the bit comparing circuit will be explained. The bit comparingcircuit 810 compares a value which is stored in accordance with thestate of the fuses 861 to 863, with an address signal A_(X) i! (or A_(Y)j!). When the address signal coincides with the stored value, an outputC_(X) i! (or C_(Y) j!) has a high level. When the address signal doesnot coincide with the stored value, the output has a low value. Thefuses 861 to 863 are treated as follows. In a case where a logical value"0" is stored, the fuses 861 and 862 are blown. Thus, when an addressindicates a logical value "0", that is, when the address signal A_(X) i!(or A_(Y) j!) has a low level, and the complement thereof A_(X) i! (orA_(Y) j!) has a high level, the output C_(X) i! (or C_(Y) j!) has a highlevel. In a case where a logical value "1" is stored, the fuses 861 and863 are blown. Thus, when an address indicates a logical value "1", thatis, when the address signal A_(X) i! (or A_(Y) j!) has a high level, andthe complement thereof A_(X) i! or A_(Y) j!) has a low level, the outputC_(X) i! (Or C_(Y) j!) has a high level. In a case where the value "X"is stored, the fuses 862 and 863 are blown. In this case, the outputC_(X) i! (or C_(Y) j!) has a high level, independently of the appliedaddress. When coincidence is shown in all the bit comparing circuits,the output YR of the AND gate 800 has a high level. That is, it isjudged that an applied address coincides with the wrong address. In acase where at least one bit of the applied address does not coincidewith the stored value, the output YR has a low level. The aboveoperation is performed in a case where the enable signal E has a highlevel. In a case where the enable signal E has a low level, the outputC_(X) i! (or C_(Y) j!) of each bit comparing circuit has a low level,and thus the output YR has a low level.

It is a feature of the present embodiment to be able to make small thecircuit scale of an address comparing circuit and the area occupied bythe circuit.

A device for storing a wrong address is not always required to include afuse which can be blown by a laser beam, but may include a fuse whichcan be electrically blown, or may be formed of a nonvolatile memory suchas an EPROM.

Embodiment 4 of Address Comparing Circuit

FIG. 31 shows the fourth embodiment of an address comparing circuit. Thepresent embodiment is different from the embodiment of FIG. 30 incircuit configuration of each bit comparing circuit 810. In FIG. 31,reference numerals 871, 881 and 882 designate fuses which can be blownby a laser beam, 872 an N-channel MOS transistors, 873 and 887inverters, 874, 875, 885 and 886 NAND gates, and 883 and 884 OR gates.The operation of this bit comparing circuit will be explained below.

In a case where the value "X" is stored in the bit comparing circuit810, the fuse 871 is blown. Thus, a node 890 is brought to a lowpotential level, a node 891 is put to a high potential level, a node 892has a high potential level, and a node 893 has a low potential level.Accordingly, a don't-care signal D has a high level. Thus, an outputC_(X) i! (or C_(Y) j!) has a high level, independently of an appliedaddress. In order to store a logical value "0" or "1" in the bitcomparing circuit, the fuse 871 is not blown, and thus the don't-caresignal D has a low level. In a case where the logical value "0" isstored, the fuse 881 is blown. Thus, when an applied address indicatesthe logical value "0", that is, when an address signal A_(X) i! (orA_(Y) j!) has a low level, and the complement A_(X) i! (or A_(Y) j!) ofthe address signal has a high level, the output C_(X) i! (or C_(Y) j!)has the high level. In a case where the logical value "1" is stored, thefuse 882 is blown. Thus, when the applied address indicates the logicalvalue "1", that is, when the address signal A_(X) i! (or A_(Y) j!) has ahigh level, and the complement A_(X) i! (or A_(Y) j!) of the addresssignal has a low level, the output C_(X) i! (or C_(Y) j!) has the highlevel.

A feature of the present embodiment is that each of the values "0", "1"and "X" can be stored in the bit comparing circuit by blowing only asingle fuse. In the embodiment of FIG. 30, each of these values isstored by blowing two fuses. Accordingly, the present embodiment canshorten a time necessary for repairing a defect in the course of theinspection of a semiconductor memory. Another feature of the presentembodiment is that a plurality of bit comparing circuits can use thedon't-care signal D in common, though such circuit connection is notshown in FIG. 31. For example, in a case where five kinds of replacementmethods shown in FIG. 29 are carried out, a plurality of bit comparingcircuits corresponding to the address signals A_(X) 1! to A_(X) n_(W)-2! can use the don't-care signal in common. That is, only a singlecircuit part made up of circuit elements 871 to 875 is provided, andthus the area occupied by the address comparing circuit can be reduced.

Embodiment 5 of Address Comparing Circuit

FIG. 32 shows the fifth embodiment of an address comparing circuit. Thepresent embodiment is different from the embodiment of FIG. 30, incircuit configuration of each bit comparing circuit 810. In FIG. 32,reference numerals 901 and 911 designate fuses which can be blown by alaser beam, 902 and 912 N-channel MOS transistors, 903 and 913inverters, 904, 905, 914 and 915 NAND gates, 917, 918, 919 and 920P-channel MOS transistors, and 921, 922, 923 and 924 N-channel MOStransistors. The operation of the bit comparing circuit will beexplained below.

When the fuses 901 and 911 are not blown, nodes 932 and 942 are kept ata low potential level. Accordingly, the output C_(X) i! (or C_(Y) j!) ofthe bit comparing circuit 810 has a high level, independently of anapplied address. This indicates a state that the value "X" is stored. Ina case where a logical value "0" is stored, the fuse 901 is blown. Thus,the node 932 has a high potential level, and the node 942 has a lowpotential level. Accordingly, when an address indicates the logicalvalue "0", that is, when an address signal A_(X) i! (or A_(Y) j!) has alow level, and the complement A_(X) i! (or A_(Y) j!) of the addresssignal has a high level, the output C_(X) i! (or C_(Y) j!) has the highlevel. In a case where a logical value "1" is stored, the fuse 911 isblown. Thus, the node 932 has the low potential level, and the node 942has the high potential level. Accordingly, when the address indicatesthe logical value "1", that is, when the address signal A_(X) i! (orA_(Y) j!) has the high level, and the complement A_(X) i! (or A_(Y) j!)has the low level, the output C_(X) i! (or C_(Y) j!) has the high level.

A feature of the present embodiment is that the number of fuses can bereduced, as compared with the embodiments of FIGS. 30 and 31, and thusan area occupied by the address comparing circuit can be reduced.Moreover, in a case where the value "X" is stored, it is not required toblow the fuses. Accordingly, a time necessary for repairing a defect canbe shorter than that in the embodiments of FIGS. 30 and 31.

Another feature of the present embodiment is that when both of the fuses901 and 911 are blown, the address comparing circuit concerned is madeinvalid. This is because the output C_(X) i! (or C_(Y) j!) is alwayskept at the low level, and thus the output YR is always kept at the lowlevel. This function can be used in a case where a spare memory cellsubstituted for a regular memory cell is defective. For example, let usconsider a case where a defective regular bit line in the semiconductormemory of FIG. 21 is replaced by a spare bit line SB 0! with the aid ofthe address comparing circuit AC 0!. When the spare bit line SB 0! isfound defective, the address comparing circuit AC 0! is invalidated inthe above-mentioned manner, and one of the remaining address comparingcircuits (for example, an address comparing circuit AC 2!) is used forreplacing the defective regular bit line by a spare bit line SB 1!.

In the third to fifth embodiments of an address comparing circuit, thedon't-care value "X" can be stored in all the bit comparing circuits. Insome cases, however, it is not required to store the value "X" in someof the bit comparing circuits. For example, in a case where five kindsof replacement methods shown in FIG. 29 are carried out, it is notrequired to store the value "X" in bit comparing circuits correspondingto address signals A_(Y) 0! to A_(Y) n_(B) -1!. In this case, an areaoccupied by the address comparing circuit can be reduced by using a bitcomparing circuit incapable of storing the value "X" (for example, thebit comparing circuit of FIG. 19) as each of the bit comparing circuitscorresponding to the address signals A_(Y) 0! to A_(Y) n_(B) -1!.Further, in a case where only three kinds of replacement methods shownin the third to fifth columns of FIG. 29 are carried out (that is,single-bit and pair-bit defects are not repaired), each of bit comparingcircuits corresponding to address signals A_(X) n_(W) -2! and A_(X)n_(W) -1! is formed of a circuit capable of storing the value "X", eachof bit comparing circuits corresponding to address signals A_(Y) 0! toA_(Y) N_(B) -1! is formed of a circuit incapable of storing the value"X", and bit comparing circuits corresponding to address signals A_(X)0! to A_(X) n_(W) -3! are omitted.

Embodiment 10

FIG. 33 shows an embodiment of a microcomputer according to the presentinvention. Referring to FIG. 33, a main memory MM, a central processingunit CPU and an input/output circuit I/O are formed on a single chip.The main memory MM is formed of one of the first to ninth embodiments ofa semiconductor memory, and thus the manufacturing yields of theone-chip microcomputer is improved in a great degree.

According to the present invention, the number of memory cells which aresimultaneously replaced by spare memory cells to repair a defect, isreduced. Thus, the probability that a defective memory cell is includedin the spare memory cells, is reduced, and moreover the utilizationefficiency of the spare memory cells is enhanced. Further, it ispossible to increase the degree of freedom in determining the number ofspare bit lines included in each memory mat and the number of addresscomparing circuit. Thus, a redundancy control circuit can be formedwhich is small in area, and can improve the manufacturing yields of asemiconductor memory in a great degree.

It is further understood by those skilled in the art that the foregoingdescription shows only preferred embodiments of the disclosed device andthat various changes and modifications may be made in the inventionwithout departing from the spirit and scope thereof.

We claim:
 1. A semiconductor memory comprising:a first memory mat and asecond memory mat, each memory mat having a plurality of word lines, aplurality of bit lines, a spare bit line, and a plurality of memorycells; a plurality of bit line selection lines coupled to said first andsecond memory mats; a spare bit line selection line coupled to saidfirst and second memory mats; and a redundancy circuit having inputnodes to which a portion of an access address is supplied and an outputnode coupled to said spare bit line selection line, wherein respectiveones of the plurality of bit lines in said first and second mats areselected when a corresponding one of said plurality of bit lineselection lines is activated, wherein the spare bit lines in said firstand second memory mats are selected when said spare bit line selectionline is activated, wherein one of the first and second memory mats isselected and one of said plurality of word lines in the selected memorymat is activated at a memory access, wherein said redundancy circuitfurther includes:a first comparing circuit having first input nodescoupled to the input nodes of said redundancy circuit, a first memoryfor storing a first defect information to be compared with signalssupplied to the first input nodes, and a first output node coupled tothe output node of said redundancy circuit; and a second comparingcircuit having second input nodes coupled to the input nodes of saidredundancy circuit, a second memory for storing a second defectinformation to be compared with signals supplied to the second inputnodes, and a second output node coupled to the output node of saidredundancy circuit, wherein the first defect information includes afirst information indicating one of said plurality of bit line selectionlines in which a first defect is contained and a second informationindicating one of said first and second memory mats in which the firstdefect is contained, and wherein the second defect information includesa third information indicating one of said plurality of bit lineselection lines in which a second defect is contained and a fourthinformation indicating one of said first and second memory mats in whichthe second defect is contained.
 2. The semiconductor memory according toclaim 1, further comprising:a Y-decoder having input nodes to which acolumn address is supplied and output nodes which are coupled to saidplurality of bit line selection lines, wherein said Y-decoder isdisabled when said spare bit line selection line is activated.
 3. Thesemiconductor memory according to claim 2, further comprising:a rowdecoder having input nodes to which a row address is supplied and outputnodes which are coupled to said plurality of word lines in said firstand second mats.
 4. The semiconductor memory according to claim 3,wherein the access address is related to both the column address and therow address.
 5. The semiconductor memory according to claim 4,whereinsaid portion of the access address has a first part which is related toboth the first information and the second information and has a secondpart which is related to both the third information and the fourthinformation, wherein each of the first information and the thirdinformation is related to the column address, and wherein each of thesecond information and the fourth information is related to a part ofthe row address.
 6. The semiconductor memory according to claim 5,wherein each of the first and second memories contains fuses.
 7. Thesemiconductor memory according to claim 1, further comprising:aPlurality of address input terminals to which the access address issupplied under control of an address multiplex system, wherein thesemiconductor memory is a dynamic random access memory in a single chipdevice.
 8. The semiconductor memory according to claim 3, furthercomprising:a plurality of address input terminals to which both the rowaddress and the column address are supplied under control of an addressmultiplex system, wherein the semiconductor memory is a dynamic randomaccess memory in a single chip device.
 9. The semiconductor memoryaccording to claim 1,wherein said redundancy circuit further includes anOR circuit, and wherein the first output node of the first comparingcircuit and the second output node of the second comparing circuit arecoupled to the output node of said redundancy circuit via the ORcircuit.
 10. The semiconductor memory according to claim 8,wherein saidredundancy circuit further includes an OR circuit, and wherein the firstoutput node of the first comparing circuit and the second output node ofthe second comparing circuit are coupled to the output node of saidredundancy circuit via the OR circuit.
 11. A semiconductor memorycomprising:a first memory mat and a second memory mat, each having aplurality of word lines, a plurality of bit lines, a spare bit line, anda plurality of memory cells; a plurality of bit line selection lines,each coupled to respective ones of the plurality of bit lines of saidfirst and second memory mats; a spare bit line selection line coupled tothe spare bit lines of said first and second memory mats; an OR circuithaving an output node coupled to said spare bit line selection line; afirst comparing circuit having first input nodes to which an informationindicating one of said plurality of bit line selection lines and one ofsaid first and second memory mats is supplied, having a first memory forstoring a first defective information to be compared with saidinformation, and having a first output node coupled to a first inputnode of said OR circuit; and a second comparing circuit having secondinput nodes to which said information is supplied, having a secondmemory for storing a second defective information to be compared withsaid information, and having a second output node coupled to a secondinput node of said OR circuit; wherein said first defective informationcontains a first information indicating one of said plurality of bitline selection lines in which a first defect is contained and a secondinformation indicating one of said first and second memory mats in whichthe first defect is contained, wherein said second defective informationcontains a third information indicating one of said plurality of bitline selection lines in which a second defect is contained and a fourthinformation indicating one of said first and second memory mats in whichthe second defect is contained, and wherein one of said first and secondmemory mats is selected and one of said plurality of word lines in theselected memory mat is activated at a memory access.
 12. Thesemiconductor memory according to claim 11, further comprising:aY-decoder having input nodes to which a column address is supplied andoutput nodes which are coupled to said plurality of bit line selectionlines; and a row decoder having input nodes to which a row address issupplied and output nodes which are coupled to said plurality of wordlines of said first and second memory mats.
 13. The semiconductor memoryaccording to claim 12, wherein said information is related to both apart of the row address and the column address.
 14. The semiconductormemory according to claim 13, wherein each of the first and secondmemories contains fuses.
 15. The semiconductor memory according to claim14, further comprising:a plurality of address input terminals to whichboth the row address and the column address are supplied under controlof an address multiplex system, wherein the semiconductor memory is adynamic random access memory in a single chip device.
 16. Asemiconductor memory comprising:a first memory mat, a second memory mat,a third memory mat, and a fourth memory mat, each having a plurality ofword lines, a plurality of bit lines, a first spare bit line, a secondspare bit line, and a plurality of memory cells; a plurality of bit lineselection lines, each coupled to respective ones of the plurality of bitlines of said first, second, third, and fourth memory mats; a firstspare bit line selection line coupled to the first spare bit lines ofsaid first, second, third, and fourth memory mats; a second spare bitline selection line coupled to the second spare bit lines of said first,second, third, and fourth memory mats; a first OR circuit having anoutput node coupled to said first spare bit line selection line; asecond OR circuit having an output node coupled to said second spare bitline selection line; a first comparing circuit having first input nodesto which an information indicating one of said plurality of bit lineselection lines and one of said first and second memory mats issupplied, having a first memory for storing a first defectiveinformation to be compared with said information, and having a firstoutput node coupled to a first input node of said first OR circuit; asecond comparing circuit having second input nodes to which saidinformation is supplied, having a second memory for storing a seconddefective information to be compared with said information, and having asecond output node coupled to a second input node of said first ORcircuit; a third comparing circuit having third input nodes to whichsaid information is supplied, having a third memory for storing a thirddefective information to be compared with said information, and having athird output node coupled to a first input node of said second ORcircuit; and a fourth comparing circuit having fourth input nodes towhich said information is supplied, having a fourth memory for storing afourth defective information to be compared with said information, andhaving a fourth output node coupled to a second input node of saidsecond OR circuit; wherein each of said first, second, third, and fourthdefective information contains a first information indicating one ofsaid plurality of bit line selection lines in which a defect iscontained and a second information indicating one of the four memorymats in which the defect is contained, and wherein one of said first,second, third, and fourth memory mats is selected and one of theplurality of word lines in the selected memory mat is activated at amemory access.
 17. The semiconductor memory according to claim 16,further comprising:a Y-decoder having input nodes to which a columnaddress is supplied and output nodes which are coupled to said pluralityof bit line selection lines; and a row decoder having input nodes towhich a row address is supplied and output nodes which are coupled tosaid plurality of word lines of said first, second, third, and fourthmemory mats.
 18. The semiconductor memory according to claim 17, whereinsaid information is related to both a part of the row address and thecolumn address.
 19. The semiconductor memory according to claim 18,wherein each of the first, second, third, and fourth memories containsfuses.
 20. The semiconductor memory according to claim 19, furthercomprising:a plurality of address input terminals to which both the rowaddress and the column address are supplied under control of an addressmultiplex system, and wherein the semiconductor memory is a dynamicrandom access memory in a single chip device.
 21. A semiconductor memorycomprising:a plurality of memory mats, each having a plurality of wordlines, a plurality of bit lines, a spare bit line, and a plurality ofmemory cells; a plurality of bit line selection lines, each coupled torespective ones of the plurality of bit lines of said plurality ofmemory mats; a spare bit line selection line coupled to the spare bitlines of said plurality of memory mats; and a redundancy circuit havingan output node coupled to said spare bit line selection line and inputnodes to which an information indicating one of said plurality of bitline selection lines and one of said plurality of memory mats issupplied, wherein said redundancy circuit includes:a first comparingcircuit having first input nodes coupled to the input nodes of saidredundancy circuit, a first memory for storing a first defectinformation to be compared with signals supplied to the first inputnodes, and a first output node coupled to the output node of saidredundancy circuit; and a second comparing circuit having second inputnodes coupled to the input nodes of said redundancy circuit, a secondmemory for storing a second defect information to be compared withsignals supplied to the second input nodes, and a second output nodecoupled to the output node of said redundancy circuit, wherein each ofthe first and second memories has a first region for storing a firstinformation indicating one of said plurality of bit line selection linesin which a defect is contained and a second region for storing a secondinformation indicating one of said plurality of memory mats in which thedefect is contained, and wherein one of said plurality of memory mats isselected and one of said plurality of word lines of the selected memorymats is activated at a memory access.
 22. The semiconductor memoryaccording to claim 21, further comprising:a Y-decoder having input nodesto which a column address is supplied and output nodes which are coupledto said plurality of bit line selection lines; and an X-decoder havinginput nodes to which a row address is supplied and output nodes whichare coupled to said plurality of word lines of said plurality of memorymats.
 23. The semiconductor memory according to claim 22,wherein theinformation, supplied to the input nodes of said redundancy circuit isrelated to both the column address and a part of the row address,wherein said first information is related to the column address, andwherein said second information is related to said part of the rowaddress.
 24. The semiconductor memory according to claim 23, whereineach of the first and second memories contains fuses.
 25. Thesemiconductor memory according to claim 24, further comprising:aplurality of address input terminals to which both the row address andthe column address are supplied under control of an address multiplexsystem, and wherein the semiconductor memory is a dynamic random accessmemory in a single chip device.
 26. The semiconductor memory accordingto claim 25,wherein said redundancy circuit further includes an ORcircuit, and wherein the first output node of the first comparingcircuit and the second output node of the second comparing circuit arecoupled to the output node of said redundancy circuit via the ORcircuit.
 27. The semiconductor memory according to claim 21, whereinsaid redundancy circuit further includes an OR circuit, andwherein thefirst output node of the first comparing circuit and the second outputnode of the second comparing circuit are coupled to the output node ofsaid redundancy circuit via the OR circuit.
 28. A semiconductor memorycomprising:a plurality of memory mats, each having a plurality of wordlines, a plurality of bit lines, a first spare bit line, a second sparebit line, and a plurality of memory cells; a plurality of bit linesselection lines, each coupled to respective ones of the plurality of bitlines of said plurality of memory mats; a first spare bit line selectionline coupled to the first spare bit lines of said plurality of memorymats; a second spare bit line selection line coupled to the second sparebit lines of said plurality of memory mats; and a redundancy circuithaving a first output node coupled to said first spare bit lineselection line, a second output node coupled to said second spare bitline selection line, and input nodes to which an information indicatingone of said plurality of bit line selection lines and one of saidplurality of memory mats is supplied, wherein said redundancy circuitincludes:a first comparing circuit having first input nodes coupled tothe input nodes of said redundancy circuit, a first memory for storing afirst defect information to be compared with signals supplied to thefirst input nodes, and a first output node coupled to the first outputnode of said redundancy circuit; a second comparing circuit havingsecond input nodes coupled to the input nodes of said redundancycircuit, a second memory for storing a second defect information to becompared with signals supplied to the second input nodes, and a secondoutput node coupled to the first output node of said redundancy circuit;a third comparing circuit having third input nodes coupled to the inputnodes of said redundancy circuit, a third memory for storing a thirddefect information to be compared with signals supplied to the thirdinput nodes, a third output node coupled to the second output node ofsaid redundancy circuit; and a fourth comparing circuit having fourthinput nodes coupled to the input nodes of said redundancy circuit, afourth memory for storing a fourth defect information to be comparedwith signals supplied to the fourth input nodes, and a fourth outputnode coupled to the second output node of said redundancy circuit,wherein each of the first, second, third, and fourth memories has afirst region for storing a first information indicating one of saidplurality of bit line selection lines in which a defect is contained anda second region for storing a second information indicating one of saidplurality of memory mats in which the defect is contained, and whereinone of said plurality of memory mats is selected and one of saidplurality of word lines of the selected memory mat is activated at amemory access.
 29. The semiconductor memory according to claim 28,further comprising:a Y-decoder having input nodes to which a columnaddress is supplied and output nodes which are coupled to said pluralityof bit line selection lines; and an X-decoder having input nodes towhich a row address is supplied and output nodes which are coupled tosaid plurality of word lines of said plurality of memory mats.
 30. Thesemiconductor memory according to claim 29,wherein the information,supplied to the input nodes of said redundancy circuit, is related toboth the column address and a part of the row address, wherein saidfirst information is related to the column address, and wherein saidsecond information is related to said part of the row address.
 31. Thesemiconductor memory according to claim 30, wherein each of the first,second, third, and fourth memories contains fuses.
 32. The semiconductormemory according to claim 31, further comprising:a plurality of addressinput terminals to which both the row address and the column address aresupplied under control of an address multiplex system, and wherein thesemiconductor memory is a dynamic random access memory in a single chipdevice.
 33. The semiconductor memory according to claim 32,wherein saidredundancy circuit further includes a first OR circuit and a second ORcircuit, wherein the first output node of the first comparing circuitand the second output node of the second comparing circuit are coupledto the first output node of said redundancy circuit via the first ORcircuit, and wherein the third output node of the third comparingcircuit and the fourth output node of the fourth comparing circuit arecoupled to the second output node of said redundancy circuit via thesecond OR circuit.
 34. The semiconductor memory according to claim28,wherein said redundancy circuit further includes: a first OR circuitand a second OR circuit, wherein the first output node of the firstcomparing circuit and the second output node of the second comparingcircuit are coupled to the first output node of said redundancy circuitvia the first OR circuit, and wherein the third output node of the thirdcomparing circuit and the fourth output node of the fourth comparingcircuit are coupled to the second output node of said redundancy circuitvia the second OR circuit.